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| 12TTS08SPBF High Voltage Series Vishay High Power Products Phase Control SCR, 8 A DESCRIPTION/FEATURES Base cathode 4, 2 D2PAK 1 Anode 3 Anode The 12TTS08SPBF high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control RoHS COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix). PRODUCT SUMMARY VT at 8 A ITSM VRRM < 1.2 V 140 A 800 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 C, TJ = 125 C, common heatsink of 1 C/W SINGLE-PHASE BRIDGE 13.5 THREE-PHASE BRIDGE 17 UNITS A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) VRRM/VDRM ITSM VT dV/dt dI/dt TJ Range 8 A, TJ = 25 C TEST CONDITIONS Sinusoidal waveform VALUES 8 A 12.5 800 140 1.2 150 100 - 40 to 125 V A V V/s A/s C UNITS VOLTAGE RATINGS PART NUMBER 12TTS08SPBF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 IRRM/IDRM AT 125 C mA 1.0 Document Number: 94499 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 12TTS08SPBF High Voltage Series Vishay High Power Products Phase Control SCR, 8 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak one-cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS TC = 108 C, 180 conduction, half sine wave 10 ms sine pulse, rated VRRM applied, TJ = 125 C 10 ms sine pulse, no voltage reapplied, TJ = 125 C 10 ms sine pulse, rated VRRM applied, TJ = 125 C 10 ms sine pulse, no voltage reapplied, TJ = 125 C I2t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 C 8 A, TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C VALUES 8 12.5 A 120 140 72 100 1000 1.2 16.2 0.87 0.05 VR = Rated VRRM/VDRM 1.0 mA 30 50 150 100 V/s A/s A2s V m V A2s UNITS I2t Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TJ = 25 C TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 65 C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C Anode supply = 6 V, resistive load, TJ = - 65 C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C VGD IGD TJ = 125 C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 W 2.0 1.5 10 20 15 10 1.2 1 V 0.7 0.2 0.1 mA mA A V UNITS SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 C TJ = 125 C TEST CONDITIONS VALUES 0.8 3 100 s UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94499 Revision: 06-Jun-08 12TTS08SPBF High Voltage Series Phase Control SCR, 8 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight 0.07 minimum Mounting torque maximum Marking device Case style D2PAK (SMD-220) 12 (10) 6 (5) oz. kgf cm (lbf in) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 1.5 62 0.5 2 g C/W UNITS C 12TTS08S Document Number: 94499 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 12TTS08SPBF High Voltage Series Vishay High Power Products Phase Control SCR, 8 A Maximum Allowable Case T emperature (C) 12T 08 TS R thJC (DC) = 1.5 K/ W 120 Maximum Average On-state Power Loss (W) 125 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 Average On-state Current (A) DC 180 120 90 60 30 R Limit MS Conduction Period 115 Conduc tion Angle 110 30 105 60 90 120 180 100 0 2 4 6 8 10 Average On-state Current (A) 12T S T 08 TJ = 125C Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case T emperature (C) 12T S T 08 R thJC(DC) = 1.5 K/ W Peak Half S Wave On-state Current (A) ine 125 130 120 110 100 90 80 70 60 1 At Any R ated Load Condition And With R ated V RRM Applied F ollowing S urge. 120 Initial TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 115 Conduction Period 110 30 60 90 120 180 DC 12 14 105 12T S T 08 100 0 2 4 6 8 10 Average On-state Current (A) 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) Peak Half S Wave On-state Current (A) ine 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Average On-state Current (A) Conduction Angle 150 140 130 120 110 100 90 80 70 60 180 120 90 60 30 R Limit MS Maximum Non R epetitive S urge Current Versus Puls T e rain Duration. Control Of Conduction May Not B Maintained. e Initial TJ= 125C No Voltage R eapplied R ated VRRM R eapplied 12T S T 08 TJ= 125C 12T S T 08 50 0.01 0.1 Puls T e rain Duration (s ) 1 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94499 Revision: 06-Jun-08 12TTS08SPBF High Voltage Series Phase Control SCR, 8 A Vishay High Power Products 1000 Instantaneous On-state Current (A) 12T S T 08 100 10 TJ= 25C TJ= 125C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (C/W) 10 S teady S tate Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 12T S T 08 0.01 0.0001 0.1 0.001 0.01 S quare Wave Pulse Duration (s) 0.1 1 Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94499 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 12TTS08SPBF High Voltage Series Vishay High Power Products Phase Control SCR, 8 A ORDERING INFORMATION TABLE Device code 12 1 1 2 3 4 5 6 7 T 2 - T 3 S 4 08 5 S 6 TRL PbF 7 8 Current rating (12.5 A) Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier Voltage rating (08 = 800 V) S = TO-220 D2PAK (SMD-220) version None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94499 Revision: 06-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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